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SKKU Research Team Led by Young Hee Lee Develops Tunneling Random Access Memory (TRAM)

A research team led by Young Hee Lee, the director of the Center for Integrated Nanostructure Physics in the Institute of Basic Science, and a research team led by Professor Woo Jong Yu of the School of Electronic and Electrical Engineering worked as co-research teams to develop TRAM, which is a newly devised memory. Previous memory devices were called resistive random access memory (RRAM) and phase-change random access memory (PRAM). As both these memories have different electrical elements, they suffered from electrical changes, which eventually led to low effectiveness of the memory devices. The research teams, therefore, aimed to invent a memory device with less power consumption, but higher levels of stability and advanced flexibility. Finally, the research team constructed TRAM, which uses less power but performs a higher level of computing tasks, is based on the synapses of the human rain. The teams developed TRAM by using two electrodes, called the source and the drain, rather than three. In addition, TRAM was made with stabilized thermal materials, such as the two dimensional nano-materials graphene and hexagonal boron nitride. TRAM has promising prospects due to its stability, flexibility, and electric efficiency. The invention of TRAM was reported in Nature Communications on September 2, 2016.

홍지숙  jisuk2369@gmail.com

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